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| semiconductor forward international electronics ltd. technical data pnp epitaxial silicon transistor low frequency amplifier absolute maximum ratings at tamb=25 0 c symbol rating unit collector-base voltage vcbo -50 v collector-emitter voltage vceo -50 v emitter-base voltage vebo -5 v collector current ic -150 ma pin: collector dissipation pc 450 mw style junction temperature tj 150 0 c storage temperature tstg -55~150 0 c electrical characteristics at tamb=25 0 c s y mbol min t yp max unit bvcbo -50 v bvceo -50 v bvebo -5 v icbo -100 na dc current gain hfe 70 400 vce=-6v ic=-2ma collector-emitter saturation volta g e vce ( sat ) -0.3 v ic=-100ma ib=-10ma out p ut ca p acitance cob 7 p f vcb=-10v ie=0 f=1mhz current gain-bandwidth product ft 80 mhz vce=-10v ic=-1ma classification hfe classification o y gr hfe 70-140 120-240 200-400 characteristic characteristic collector-base breakdown voltage ic=-100ua ie=0 collector-emitter breakdown voltage ic=-1ma ib=0 emitter-base breakdown voltage ie=-100ua ic=0 collector cutoff current vcb=-50v ie=0 2sA1267 1 2 3 e c b no.1 package: to-92s test conditions * complement to 2sc3199 * collector-emitter voltage v ceo =-50v
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